Direct observation of vacancy defects in electroplated Cu films

Author

Suzuki, T. ; Uedono, A. ; Nakamura, T. ; Mizushima, Y. ; Kitada, H. ; Koura, Y.

Author_Institution

Fujitsu Labs. LTD., Tokyo, Japan

fYear

2004

Firstpage

87

Lastpage

89

Abstract

Vacant defects in electroplated Cu films are investigated by positron annihilation and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The evolution of vacancies was divided into two regions with respect to the annealing temperature. For temperature below 300°C, the behavior of vacancies was closely related to grain growth. When the annealing temperature was over 300°C, the vacancy concentration was estimated to be of the order of 10¹⁹ ∼10²⁰/cm³, which is similar to void volume estimates in stress induced voiding (SIV) failure.

Keywords

annealing; copper; electroplated coatings; metallic thin films; point defects; positron annihilation; transmission electron microscopy; Cu; HAADF-STEM; annealing temperature; dark-field scanning; electroplated Cu films; grain growth; positron annihilation; stress induced voiding failure; transmission electron microscopy; vacancy defects; vacancy evolution; void volume estimates; Annealing; Crystals; Electron emission; Grain boundaries; Grain size; Parameter estimation; Plastic films; Positrons; Scattering parameters; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International

Print_ISBN

0-7803-8308-7

Type

conf

DOI

10.1109/IITC.2004.1345697

Filename

1345697