Characteristics of a 1200 V CSTBT optimized for industrial applications

Author

Tomomatsu, Yoshifumi ; Kusunoki, Shigeru ; Satoh, Katsumi ; Yamada, Junji ; Yu, Yoshiharu ; Donlon, John F. ; Iwamoto, Hideo ; Motto, Eric R.

Author_Institution

Fukuryo Semicon Eng. Corp., Fukuoka, Japan

Volume

2

fYear

2001

Firstpage

1060

Abstract

The design of power semiconductor chips has always involved a trade-off between switching speed, static losses, safe operating area and short-circuit withstanding capability. This paper presents an optimized structure for 1200 V IGBTs from the viewpoint of all-round performance. The new device is based on a novel wide cell pitch carrier stored trench bipolar transistor (CSTBT). Unlike conventional trench gate IGBTs, this structure simultaneously achieves both low on-state voltage and the rugged short-circuit capability desired for industrial applications.

Keywords

bipolar transistor switches; insulated gate bipolar transistors; power bipolar transistors; power semiconductor switches; 1200 V; carrier stored trench bipolar transistor; industrial applications; on-state voltage; power semiconductor chips design; rugged short-circuit capability; safe operating area; short-circuit withstanding capability; static losses; switching speed; wide cell pitch; Bipolar transistors; Capacitance; Charge carrier lifetime; Design engineering; Insulated gate bipolar transistors; Low voltage; MOSFET circuits; Power conversion; Power engineering and energy; Power semiconductor switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2001. Thirty-Sixth IAS Annual Meeting. Conference Record of the 2001 IEEE

Conference_Location

Chicago, IL, USA

ISSN

0197-2618

Print_ISBN

0-7803-7114-3

Type

conf

DOI

10.1109/IAS.2001.955599

Filename

955599