DocumentCode :
1616195
Title :
Rapid root cause analysis and process change validation with design-centric volume diagnostics in production yield enhancement
Author :
Appello, Davide ; Tancorre, Vincenzo ; Gomez, Jacky ; Rosi, Daniele Li ; Suzor, Christophe ; Kekare, Sagar A.
Author_Institution :
STMicroelectronics Srl, Agrate Brianza, Italy
fYear :
2010
Firstpage :
311
Lastpage :
316
Abstract :
Identifying systematic failure mechanisms that cause significant yield loss is a primary yield ramp activity. This task is rendered especially difficult for products made with sub-one-hundred nanometer technologies due to the subtle design-process interactions that create transient systematic failure mechanisms. The impact of this difficulty is felt in prolonged ramp cycles and missed market windows for advanced products. A volume diagnostics methodology proposed earlier was seen to resolve this difficulty with highly accurate localization of systematic failures within the design and with an order of magnitude faster time to results compared to traditional approaches. This work presents a few examples of the success of the design-centric volume diagnostics approach in identifying subtle design-process interactions that led to systematic yield loss. It also demonstrates the statistical validation of the process changes introduced to eliminate this yield loss.
Keywords :
fault diagnosis; integrated circuit yield; nanoelectronics; statistical analysis; design-centric volume diagnostics; primary yield ramp activity; process change validation; production yield enhancement; rapid root cause analysis; statistical validation; systematic failure mechanism; Circuit faults; Failure analysis; Layout; Performance evaluation; Systematics; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2010 IEEE/SEMI
Conference_Location :
San Francisco, CA
ISSN :
1078-8743
Print_ISBN :
978-1-4244-6517-0
Type :
conf
DOI :
10.1109/ASMC.2010.5551475
Filename :
5551475
Link To Document :
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