Threshold voltage tuning by metal gate work function modulation for 10 nm CMOS integration and beyond

Author

Yoshida, Norihiro ; Keping Han ; Peng-Fu Hsu ; Beach, M. ; Xinliang Lu ; Hung, R. ; Mao, Dong ; Hao Chen ; Wei Tang ; Yu Lei ; Jing Zhou ; Noori, Abdollah ; Miao Jin ; Kun Xu ; Phatak, A. ; Shiyu Sun ; Hassan, Shoaib ; Gandikota, Srikant ; Chorng-Ping Cha

Author_Institution

Appl. Mater., Santa Clara, CA, USA

fYear

2014

fDate

28-30 April 2014

Firstpage

1

Lastpage

2

Abstract

This paper describes a novel scheme of metal gate integration to achieve precise threshold voltage (VTH) control and multiple VTH, by using metal composition and ion implantation (I/I) into work function metal (WFM). Moreover, WFM full fill is demonstrated with in situ barrier metal to satisfy the conductance requirement of sub-10 nm node gate.

Keywords

CMOS integrated circuits; circuit tuning; ion implantation; work function; CMOS integration; VTH control; WFM; in situ barrier metal; ion implantation; metal composition; metal gate integration; metal gate work function modulation; multiple VTH; precise threshold voltage control; size 10 nm; threshold voltage tuning; CMOS integrated circuits; Logic gates; MOS devices; Nitrogen; Tin; Tuning;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/VLSI-TSA.2014.6839647

Filename

6839647