Title :
High speed Si-based optical modulator for on-chip optical interconnects
Author :
Marris, D. ; LUPU, ANATOLE ; Pascal, Daniel ; Cercus, Jean-Luc ; Vivien, Laurent ; Cassan, Eric ; Laval, Suzanne
Author_Institution :
Inst. d´´Electronique Fondamentale, Univ. Paris Sud, France
Abstract :
A modulation-doped SiGe-Si multiple quantum well modulator (MD-MQW) embedded in a reverse biased PIN junction is described. Experimental and theoretical results show that the optical index variation can be achieved by plasma-dispersion effect associated to carrier depletion. Interferometric integrated structures proper to transform the obtained phase modulation into amplitude modulation are presented, and the main properties of the optical modulator are evaluated, including intrinsic rapidity, contrast ratio and insertion losses.
Keywords :
amplitude modulation; elemental semiconductors; optical interconnections; optical modulation; p-i-n diodes; phase modulation; silicon compounds; MD-MQW; Si-based optical modulator; SiGe:Si; amplitude modulation; carrier depletion; contrast ratio; doped SiGe-Si; high speed optical modulator; insertion losses; interferometric integrated structures; intrinsic rapidity; modulation doping; multiple quantum well modulator; on-chip optical interconnects; optical index variation; phase modulation; plasma-dispersion effect; reverse biased PIN junction; Amplitude modulation; Epitaxial layers; High speed optical techniques; Integrated optics; Optical interconnections; Optical interferometry; Optical losses; Optical modulation; Phase modulation; Plasma properties;
Conference_Titel :
Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International
Print_ISBN :
0-7803-8308-7
DOI :
10.1109/IITC.2004.1345712
