Fluctuation in drain induced barrier lowering (DIBL) for FinFETs caused by granular work function variation of metal gates

Author

Matsukawa, T. ; Fukuda, Kenji ; Liu, Y.X. ; Endo, Kazuhiro ; Tsukada, J. ; Ishikawa, Yozo ; Yamauchi, Hiroyuki ; O´uchi, S. ; Migita, S. ; Mizubayashi, W. ; Morita, Yusuke ; Ota, Hiroyuki ; Masahara, M.

Author_Institution

Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan

fYear

2014

fDate

28-30 April 2014

Firstpage

1

Lastpage

2

Abstract

Fluctuation in drain induced barrier lowering (DIBL) has been investigated in detail for FinFETs with regard to work function variation (WFV) in the metal gates (MGs). The FinFETs with a polycrystalline TiN MG exhibit significantly larger fluctuation in DIBL than that for an amorphous TaSiN MG because of the WFV. The granular WFV of TiN was modeled using 3D TCAD simulation. By reproducing the DIBL fluctuation caused by the WFV, mechanism of how the WFV causes the DIBL fluctuation is discussed.

Keywords

MOSFET; titanium compounds; work function; 3D TCAD simulation; DIBL fluctuation; FinFETs; TiN; WFV; amorphous TaSiN MG; drain induced barrier lowering fluctuation; granular work function variation; metal gates; polycrystalline MG; Analytical models; Electric potential; Films; FinFETs; Fluctuations; Logic gates; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/VLSI-TSA.2014.6839648

Filename

6839648