• DocumentCode
    1616457
  • Title

    Charging experiments on SiO2 samples under electron irradiation

  • Author

    Gallet, Renaud ; Gosse, Jean-Pierre ; Arnal, Yves

  • Author_Institution
    LEMD, CNRS, Grenoble, France
  • fYear
    2001
  • fDate
    6/23/1905 12:00:00 AM
  • Firstpage
    256
  • Lastpage
    259
  • Abstract
    The charging of SiO2/glass samples under pulsed electron irradiation have been experimentally studied. More specifically, results about the secondary electron emission yield of the uncharged surface have been obtained and successfully compared to a semiempirical model. Moreover, we have pointed out a strong deviation of the evolution of the secondary emission yield (during a series of pulsed irradiation) compared to the theoretical expected one; these contradictory behaviors are explained by the influence of the trapped charges on the secondary electron emission from the charged sample surface
  • Keywords
    electron beam effects; insulating thin films; secondary electron emission; silicon compounds; surface potential; SiO2; SiO2 samples; charging experiments; electron irradiation; secondary electron emission yield; semiempirical model; uncharged surface; Chromium; Current measurement; Electron beams; Electron emission; Electrostatic measurements; Flat panel displays; Probes; Silicon compounds; Surface charging; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid Dielectrics, 2001. ICSD '01. Proceedings of the 2001 IEEE 7th International Conference on
  • Conference_Location
    Eindhoven
  • Print_ISBN
    0-7803-6352-3
  • Type

    conf

  • DOI
    10.1109/ICSD.2001.955613
  • Filename
    955613
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1616457