Title :
Influence of technological and geometrical parameters on low-frequency noise in SOI omega-gate nanowire NMOSFETs
Author :
Koyama, Masanori ; Casse, M. ; Coquand, R. ; Barraud, S. ; Ghibaudo, Gerard ; Iwai, Hisato ; Reimbold, Gilles
Author_Institution :
CEA LETI, Grenoble, France
Abstract :
A study of the interface quality in ultra-scaled omega-gate nanowire NMOSFETs, with variant technological boosters, is presented by low-frequency noise (LFN) measurements. Excellent quality of the interfaces has been achieved down to narrow width (10nm), and whatever the technological splits. In particular, efficient tensile stressor has been demonstrated with high performance enhancement and preserved noise performance fulfilling the ITRS 1/f LFN road map.
Keywords :
1/f noise; MOSFET; nanoelectronics; nanowires; semiconductor device noise; silicon-on-insulator; ITRS 1/f LFN road map; LFN measurements; SOI omega-gate nanowire NMOSFETs; efficient tensile stressor; geometrical parameters; high performance enhancement; interface quality; low-frequency noise; preserved noise performance; size 10 nm; technological parameters; technological splits; ultra-scaled omega-gate nanowire NMOSFETs; variant technological boosters; Annealing; Logic gates; MOSFET; Noise; Silicon; Strain;
Conference_Titel :
VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on
Conference_Location :
Hsinchu
DOI :
10.1109/VLSI-TSA.2014.6839653
