Title :
X-ray and neutron porosimetry as powerful methodologies for determining structural characteristics of porous low-k thin films
Author :
Lee, Hae-Jeong ; Vogt, Bryan D. ; Soles, Christopher L. ; Liu, Da-Wei ; Bauer, Bany J. ; Wu, Wen-li ; Lin, Eric K. ; Kang, Gwi-Gwon ; Ko, Min-Jin
Author_Institution :
Polymers Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
Methylsilsesquioxane based porous low-k dielectric films with varying porogen loading have been characterized using X-ray and neuron porosimetry to determine their pore size distribution, average density, wall density, porosity, density profiles, and porosity profiles. The porosity and the average pore size of the sample with 45% porogen were 52% and 23 Å in radius, respectively. Pore size, was consistent with that from small angle neutron scattering measurements. The wall density was found to be independent of the porogen content and it appeared that the porogen was 100% effective in generating pores.
Keywords :
X-ray diffraction; dielectric thin films; polymer films; porosity; porous materials; 23 angstrom; X-ray porosimetry; average density; density profiles; dielectric films; methylsilsesquioxane; neutron porosimetry; neutron scattering measurement; pore generation; pore size distribution; porogen content; porogen loading; porosity profiles; porous low-k thin films; small-angle measurement; structural characteristics; wall density; Chemical technology; Dielectric films; Dielectric measurements; Dielectric thin films; Neutron spin echo; Optical films; Polymer films; Reflectivity; Storage area networks; Transistors;
Conference_Titel :
Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International
Print_ISBN :
0-7803-8308-7
DOI :
10.1109/IITC.2004.1345718
