DocumentCode
161656
Title
50-Gbit/s operation of lateral pin diode structure electro-absorption modulator integrated DFB laser
Author
Hasebe, Koichi ; Sato, Takao ; Takeda, Kenji ; Fujii, Teruya ; Kakitsuka, Takaaki ; Matsuo, Shoichiro
fYear
2014
fDate
21-25 Sept. 2014
Firstpage
1
Lastpage
3
Abstract
We developed an electro-absorption modulator integrated DFB laser using a lateral pin diode structure. Selective doping by thermal diffusion and ion implantation is essential for fabricating a monolithic integrated device. The device was modulated by 50-Gbit/s-NRZ signal with clear-eye opening.
Keywords
diffusion; distributed feedback lasers; electro-optical modulation; electroabsorption; integrated optoelectronics; ion implantation; p-i-n diodes; semiconductor lasers; NRZ signal; bit rate 50 Gbit/s; electro-absorption modulator; integrated DFB laser; ion implantation; lateral pin diode structure; monolithic integrated device; selective doping; thermal diffusion; Distributed feedback devices; Gratings; Laser feedback; Modulation; PIN photodiodes; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Communication (ECOC), 2014 European Conference on
Conference_Location
Cannes
Type
conf
DOI
10.1109/ECOC.2014.6964194
Filename
6964194
Link To Document