Title :
Ultrathin body germanium-on-insulator (GeOI) MOSFETs fabricated by transfer of epitaxial Ge films on III–V substrates
Author :
Yu Xiao ; Rui Zhang ; Jian Kang ; Osada, Takenori ; Hata, Masaharu ; Takenaka, Mitsuru ; Takagi, Shinichi
Author_Institution :
Univ. of Tokyo, Tokyo, Japan
Abstract :
We report the first demonstration of thin body GeOI MOSFETs fabricated by a novel GeOI fabrication process based on epitaxial Ge grown on III-V compound semiconductor wafers. Normal operation of n- and p-MOSFET is confirmed for GeOI with thickness of 55 to 15 nm. The ION/IOFF ratio at room temperature is about 104 and the peak effective hole and electron mobility of 122 and 235 cm2/Vs, respectively, have been obtained for 15-nm-thick-GeOI n- and p-MOSFETs.
Keywords :
III-V semiconductors; MOSFET; carrier mobility; elemental semiconductors; epitaxial growth; germanium; semiconductor epitaxial layers; semiconductor growth; Ge; GeOI fabrication process; III-V compound semiconductor wafers; III-V substrates; electron mobility; hole mobility; n-MOSFET; p-MOSFET; size 55 nm to 15 nm; temperature 293 K to 298 K; thin body GeOI MOSFETs; ultrathin body germanium-on-insulator; Electron mobility; Epitaxial growth; Fabrication; Gallium arsenide; Logic gates; MOSFET; Substrates;
Conference_Titel :
VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on
Conference_Location :
Hsinchu
DOI :
10.1109/VLSI-TSA.2014.6839657
