Film properties and integration performance of a nano-porous carbon doped oxide

Author

Dixit, Girish ; D´Cruz, Lester ; Ahn, Sang ; Zheng, Yi ; Chang, Josephine ; Naik, Mehul ; Demos, Alex ; Witty, Derek ; M´saad, Hichem

Author_Institution

Appl. Mater., Inc., Santa Clara, CA, USA

fYear

2004

Firstpage

142

Lastpage

144

Abstract

A porous carbon doped oxide has been developed using a conventional PECVD reactor. Sequential electron beam treatment using a flood beam provides a means for removal of the thermally labile organic species and results in a porous material with high thermal stability. Film properties and integration results presented show the viability of integrating this film into a conventional dual damascene interconnect flow.

Keywords

carbon; electron beam effects; films; nanoporous materials; plasma CVD; thermal stability; C:O/sub 2/; conventional PECVD reactor; dual damascene interconnect flow; film properties; high thermal stability; integration performance; nano-porous carbon doped oxide; sequential electron beam treatment; thermally labile organic species; Chemical vapor deposition; Copper; Dielectric materials; Dielectric measurements; Electron beams; Mechanical factors; Organic materials; Permittivity; Semiconductor films; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International

Conference_Location

Burlingame, CA, USA

Print_ISBN

0-7803-8308-7

Type

conf

DOI

10.1109/IITC.2004.1345720

Filename

1345720