Selenium segregation optimization for 10 nm node contact resistivity

Author

Ni, C.-N. ; Rao, K.V. ; Khaja, F. ; Sharma, Shantanu ; Zheng, Bao ; Ramalingam, J. ; Gelatos, J. ; Lei, Jianjun ; Chang, Chorng-Ping ; Mayur, A. ; Variam, N. ; Hung, R. ; Brand, A.

Author_Institution

Appl. Mater., Santa Clara, CA, USA

fYear

2014

fDate

28-30 April 2014

Firstpage

1

Lastpage

2

Abstract

Contact resistivity (ρ_C) reduction for n-SD (source/drain) with Se⁺ implant was evaluated for different integration schemes. It is found that Se⁺ implant energy is one of the most critical process parameters for ρ_C improvement, achieved by placing the Se⁺ peak close to silicide (TiSi₂ or NiPtSi)/Si interface and minimized implant damage. Recovery of implant damage to silicide and n-SD region was achieved with millisecond laser anneal, while minimizing dopant deactivation. This work demonstrated a viable integration pathway to realize low ρ_C solution for n-SD for 10 nm node.

Keywords

contact resistance; elemental semiconductors; ion implantation; laser beam annealing; nickel compounds; platinum compounds; selenium; silicon; titanium compounds; NiPtSi-Si; Se; TiSi₂-Si; dopant deactivation minimization; integration schemes; millisecond laser annealling; minimized implant damage; n-SD region; node contact resistivity reduction; selenium segregation optimization; size 10 nm; source-drain region; viable integration pathway; Annealing; Implants; Lasers; Metals; Resistance; Silicides; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/VLSI-TSA.2014.6839658

Filename

6839658