On wafer de-embedding for SiGe/BiCMOS/RFCMOS transmission line interconnect characterization

Author

Tretiakov, Youri ; Vaed, Kunal ; Ahlgren, David ; Rascoe, Jay ; Venkatadri, Sonal ; Woods, Wayne

Author_Institution

IBM Microelectron., USA

fYear

2004

Firstpage

166

Lastpage

168

Abstract

This paper compares different de-embedding techniques for on-wafer transmission line interconnect characterization. The main goal is to contrast and correlate de-embedded S-parameters and extracted electrical characteristics versus industry standard electromagnetic solver results. For the first time the simplified "thru" technique and new "short-open" method are employed for de-embedding on-chip coplanar waveguides over the 0.1-70 GHz frequency bandwidth.

Keywords

BiCMOS integrated circuits; CMOS integrated circuits; S-parameters; coplanar waveguides; integrated circuit interconnections; radiofrequency integrated circuits; silicon compounds; transmission lines; 0.1 to 70 GHz; BiCMOS; RFCMOS; S-parameters; SiGe; electrical characteristics; industry standard electromagnetic solver; on-chip coplanar waveguides; on-wafer de-embedding techniques; short-open method; transmission line interconnect; BiCMOS integrated circuits; Coplanar transmission lines; Coplanar waveguides; Electric variables; Electromagnetic waveguides; Frequency; Germanium silicon alloys; Scattering parameters; Silicon germanium; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International

Print_ISBN

0-7803-8308-7

Type

conf

DOI

10.1109/IITC.2004.1345728

Filename

1345728