Title :
A 48nm 32Gb 8-level NAND flash memory with 5.5MB/s program throughput
Author :
Chang, Seung-Ho ; Lee, Jung-Hwan ; Park, Seong-Je ; Jung, Min-Joong ; Han, Jung-Chul ; Wang, In-Soo ; Lim, Kyu-hee ; Jung-Hwan Lee ; Kim, Ji-Hwan ; Kang, Won-Kyung ; Kang, Tai-Kyu ; Byun, Hee-Su ; Noh, Yu-Jong ; Kwon, Lee-Hyun ; Koo, Bon-Kwang ; Cho, Myun
Author_Institution :
Hynix Semicond., Icheon, South Korea
Abstract :
Lower cost per bit and higher density NAND flash memory is a general trend in nonvolatile memory applications, such as MP3 players, digital still cameras, video camcorders, USB memories and solid-state disk. Technology scaling has become expected from consumers and recently higher number of bits per cell, such as 8-level cell or 16-level cell, is becoming a viable alternative solution due to difficulties in scaling. However, a higher number of bits per cell has two technical hurdles to overcome. One is low program throughput and the other is insufficient VT-window margin. We design 32 Gb 8-level NAND flash memory with 5.5 MB/s program performance that addresses these problems. The memory has two planes with 2800 blocks per plane, 192 pages per each block, and 4 KB of data per page.
Keywords :
NAND circuits; flash memories; 8-level flash memory; NAND flash memory; bit rate 5.5 Mbit/s; nonvolatile memory applications; scaling technology; size 48 nm; storage capacity 32 Gbit; Automatic control; Costs; Flash memory; Microcontrollers; Nonvolatile memory; Pulse circuits; Silicon; Throughput; Very large scale integration; Writing;
Conference_Titel :
Solid-State Circuits Conference - Digest of Technical Papers, 2009. ISSCC 2009. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-3458-9
DOI :
10.1109/ISSCC.2009.4977397