Investigation of radiation hardness of HfO2 resistive random access memory

Author

Bing-Yue Tsui ; Ko-Chin Chang ; Bor-Yuan Shew ; Heng-Yuan Lee ; Ming-Jinn Tsai

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2014

fDate

28-30 April 2014

Firstpage

1

Lastpage

2

Abstract

Radiation hardness of HfO₂-based resistive random-access memory (RRAM) is investigated using extreme ultra-violet (EUV) and X-ray as radiation source. The low-resistance state (LRS) is immune to irradiation, but temporary change of the high-resistance state (HRS) and endurance degradation could be observed at high total irradiation dose (TID). A physical model is proposed to explain these observations. It is concluded that the HfO₂-based RRAM can be operated in high radiation environment, and EUV can be use to fabricate high-density RRAM array.

Keywords

X-ray effects; hafnium compounds; high-k dielectric thin films; integrated circuit modelling; radiation hardening (electronics); random-access storage; ultraviolet radiation effects; EUV irradiation; HRS; HfO₂; LRS; TID; X-ray radiation source; endurance degradation; extreme ultraviolet irradiation; high radiation environment; high total irradiation dose; high-density RRAM array; high-resistance state; low-resistance state; physical model; radiation hardness; resistive random access memory; Dielectrics; Hafnium compounds; Light sources; Performance evaluation; Radiation effects; Resistance; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/VLSI-TSA.2014.6839675

Filename

6839675