Influence of the defects on the I-V characteristics for LDD-nMOSFETs

Author

Bouhdada, A. ; Marrakh, R.

Author_Institution

Lab. de Phys. des Materiaux et de Microelectronique, Univ. Hassan II, Casablanca, Morocco

Volume

2

fYear

2002

fDate

6/24/1905 12:00:00 AM

Firstpage

471

Abstract

Hot-carrier injection is observed increasingly to degrade the I-V characteristics with the scaling of MOS transistors. For the lightly doped drain (LDD) MOS transistor the injection of hot carriers, caused by the high electric field in the MOS structure, is localized in the LDD region. The modeling of the drain current in relation to defects due to the hot-carrier injection allows us to investigate the I-V characteristics and the transconductance of devices. Consequently, we can calculate the amount of device degradation caused by these defects in order to find technological solutions to optimize reliability.

Keywords

MOSFET; high field effects; hot carriers; semiconductor device models; semiconductor device reliability; I-V characteristics degradation; LDD-nMOSFET defects; MOS structure electric fields; MOS transistor scaling; current-voltage characteristics; device transconductance; drain current modeling; electric field localisation; hot-carrier injection; hot-carrier injection defects; lightly doped drain MOS transistors; reliability optimization; Degradation; Electric resistance; Hot carrier injection; Hot carriers; Impact ionization; MOSFETs; Physics; Rain; Threshold voltage; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2002. MIEL 2002. 23rd International Conference on

Print_ISBN

0-7803-7235-2

Type

conf

DOI

10.1109/MIEL.2002.1003300

Filename

1003300