Realizing multimode of resistive switching in single Ag/SiO2/Pt device via tuning forming compliance current

Coexistence of volatile threshold switching (TS) and nonvolatile memory switching (MS) behaviors are achieved in a single Ag/SiO₂/Pt device. After positive forming with high compliance current (I_CC), a conductive filament (CF) consisting of continuous Ag nanocrystals is formed in the device, and the device shows bipolar MS behavior under positive SET and negative RESET. After positive forming process with low I_CC, a CF consisting of discrete Ag nanocrystals is formed. The device shows two types of resistive switching behaviors based on the subsequent operation condition. Under low I_CC condition, the device shows symmetrical TS in the positive and negative voltage loops. Interesting, when removing the I_CC, a unipolar MS with negative differential resistance (NDR) characteristic is observed under negative voltage loop. In addition, the unipolar MS shows good performances, including high uniformity, high reliability and multilevel storage potential.