Title :
A modified DSOI (Drain/Source On Insulator) device structure with better electrical performance
Author :
Bo, Jiang ; Ping, He ; Lilin, Tian ; Xi, Lin
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fDate :
6/24/1905 12:00:00 AM
Abstract :
A new device structure called DSOI (Drain/Source On Insulator) is proposed to alleviate the thermal transfer problem and floating body effects in SOI (Silicon on Insulator) device. The purpose of present work is to modify DSOI structure to get the best device electrical capability. We focus on the location of buried oxidation. And simulation results approve that this modified structure having better electrical performance than prototype
Keywords :
MOSFET; buried layers; oxidation; silicon-on-insulator; DSOI device; MOSFET; buried oxidation; electrical characteristics; floating body effect; thermal transfer; Circuit simulation; Dielectrics and electrical insulation; Equations; Helium; Ion implantation; Medical simulation; Oxidation; Silicon on insulator technology; Threshold voltage; Virtual prototyping;
Conference_Titel :
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-7235-2
DOI :
10.1109/MIEL.2002.1003304
