Title :
A charge damage study using an electron beam low k treatment
Author :
Micler, E. ; Ching-Te Li ; Krishnan, Anand T. ; Jin, Changming ; Jain, Manoj
Author_Institution :
Silicon Technol. Dev., Texas Instrum., Dallas, TX, USA
Abstract :
Organosilicate glass (OSG) deposited by plasma enhanced chemical vapour deposition (PECVD) is a likely candidate for 65nm node low k interconnect dielectric. Electron beam (e-beam) treatment efficiently stiffens porous PECVD OSG and may enable extension of PECVD OSG beyond the 65 nm node. Charge damage during e-beam exposure should be considered before implementing e-beam treatments for low k dielectrics. The effects of e-beam cathode potential on CMOS transistor threshold voltage and gate dielectric leakage current are investigated using 130nm node CMOS transistors. The impact of e-beam treatments was negligible on devices with 1.7nm gate dielectrics, but can adversely impact the 6.7nm dielectric devices.
Keywords :
dielectric thin films; electron beam deposition; glass; integrated circuit interconnections; organic compounds; plasma CVD; 1.7 nm; 130 nm; 6.7 nm; 65 nm; CMOS transistor threshold voltage; cathode potential; charge damage study; dielectric devices; e-beam exposure; electron beam low k treatment; electron beam treatment; gate dielectric leakage current; low k interconnect dielectric; organosilicate glass; plasma enhanced chemical vapour deposition; Antenna measurements; Cathodes; Dielectric constant; Dielectric measurements; Dielectric substrates; Electron beams; Mechanical variables measurement; Plasma measurements; Silicon compounds; Testing;
Conference_Titel :
Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International
Print_ISBN :
0-7803-8308-7
DOI :
10.1109/IITC.2004.1345740
