Title :
Highly efficient CMOS class E power amplifier for wireless communications
Author :
Tu, Steve Hung-Lung ; Toumazou, Chris
Author_Institution :
Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK
Abstract :
A novel high efficiency, low voltage CMOS class E power amplifier for wireless communications is presented. The power amplifier operating at 1.8 GHz is designed and simulated with a 0.6 μm CMOS process. A two-stage power amplifier architecture with a band-rejection filter for first stage driver delivers 24.8 dBm of power to the 50 Ω load with a power added efficiency greater than 73% at a supply voltage of 2.5 V
Keywords :
CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; land mobile radio; switching circuits; 0.6 micron; 1.8 GHz; 2.5 V; 73 percent; CMOS power amplifier; band-rejection filter; class E power amplifier; first stage driver; highly efficient power amplifier; low voltage operation; two-stage power amplifier architecture; wireless communications; CMOS technology; Circuits; Gallium arsenide; High power amplifiers; Power amplifiers; Power generation; Radio frequency; Switches; Transceivers; Wireless communication;
Conference_Titel :
Circuits and Systems, 1998. ISCAS '98. Proceedings of the 1998 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-4455-3
DOI :
10.1109/ISCAS.1998.704066
