Title :
Analytical solutions for breakdown voltage and electrical characteristics of STI DEMOS transistors
Author :
Tsai, H.C. ; Yadav, Y. ; Liou, R.H. ; Wu, K.-M. ; Lin, Y.C. ; Lien, C.H.
Author_Institution :
Dept. Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
A CMOS compatible high-voltage STI DEMOS transistor is fabricated and its electrical characteristics studied. A method is used to find the breakdown voltage of this two-dimensional STI DEMOS structure theoretically. A breakdown voltage model, which relates the breakdown voltage to the effective N well doping concentration NB and the width of the accumulation region χa, is derived. The predictions of this model agree very well with both the experimental data and with the TCAD simulations.
Keywords :
CMOS integrated circuits; MOSFET; semiconductor device breakdown; semiconductor device models; semiconductor doping; CMOS compatible high-voltage STI DEMOS transistor; TCAD simulations; accumulation region; breakdown voltage model; effective N well doping concentration; electrical characteristics; two-dimensional STI DEMOS structure; Breakdown voltage; Doping; Electric breakdown; JFETs; Niobium; Semiconductor process modeling;
Conference_Titel :
VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on
Conference_Location :
Hsinchu
DOI :
10.1109/VLSI-TSA.2014.6839682
