Title :
Vertical resistive switching memory (VRRAM): A real 3D device demonstration and analysis of high-density application
Author :
Wu, T.Y. ; Chen, Y.S. ; Gu, P.Y. ; Chen, W.S. ; Lee, H.Y. ; Chen, Patrick S. ; Tsai, K.H. ; Tsai, C.H. ; Rahaman, S.Z. ; Lin, Y.D. ; Chen, F.T. ; Tsai, M.J. ; Ku, T.K.
Author_Institution :
Electron. & Optoelectron. Res. Lab., Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
The design, cost, and the operation methodology in the 2-terminal and 3-terminal VRRAM devices are studied. The real 3D vertical-contact RRAM devices are also demonstrated and the devices showed good memory performance. A self-rectifying device is proposed to suppress the sneak current in the VRRAM.
Keywords :
random-access storage; three-dimensional integrated circuits; 2-terminal VRRAM devices; 3-terminal VRRAM devices; high-density analysis; memory performance; real 3D device demonstration; real 3D vertical-contact RRAM devices; self-rectifying device; sneak current suppression; vertical resistive switching memory; Arrays; Electrodes; Layout; Metals; Microprocessors; Three-dimensional displays;
Conference_Titel :
VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on
Conference_Location :
Hsinchu
DOI :
10.1109/VLSI-TSA.2014.6839683
