Top surface imaging lithography processes for I-line resists using liquid-phase silylation

Author

Arshak, K. ; Mihov, M. ; Arshak, A. ; McDonagh, D.

Author_Institution

Dept. of Electron. & Comput. Eng., Limerick Univ., Ireland

Volume

2

fYear

2002

fDate

6/24/1905 12:00:00 AM

Firstpage

503

Lastpage

508

Abstract

In this paper, liquid-phase silylation process for Top Surface Imaging Lithography systems incorporating e-beam exposure has been experimentally investigated using FT-IR spectroscopy, UV spectroscopy, SIM spectrometry and SEM cross-sectionals. The impact of different silylating agents on Shipley SPR505A resist system is presented for both the UV exposed and e-beam crosslinked regions of the resist. Results show that an e-beam dose of 50μC/cm² at 30keV is sufficient to crosslink the resist and prevent silylation. The silylation contrast using HMCTS was found to be the highest (11:1) in comparison with other two agents. It was found that the silicon incorporation in SPR505A resist follows Case II diffusion mechanisms

Keywords

Fourier transform spectroscopy; electron beam lithography; infrared spectroscopy; photoresists; scanning electron microscopy; secondary ion mass spectroscopy; ultraviolet lithography; ultraviolet spectroscopy; 30 keV; Case II diffusion mechanisms; FT-IR spectroscopy; HMCTS; I-line resists; SEM cross-sectionals; SIM spectrometry; Shipley SPR505A resist system; UV exposed regions; UV spectroscopy; deep UV lithographic technologies; e-beam exposure; liquid-phase silylation; silylating agents; top surface imaging lithography processes; High-resolution imaging; Lithography; Optical imaging; Optical sensors; Optical surface waves; Resists; Silicon; Spectroscopy; Stimulated emission; Surface topography;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2002. MIEL 2002. 23rd International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-7235-2

Type

conf

DOI

10.1109/MIEL.2002.1003307

Filename

1003307