Title :
Top surface imaging lithography processes for I-line resists using liquid-phase silylation
Author :
Arshak, K. ; Mihov, M. ; Arshak, A. ; McDonagh, D.
Author_Institution :
Dept. of Electron. & Comput. Eng., Limerick Univ., Ireland
fDate :
6/24/1905 12:00:00 AM
Abstract :
In this paper, liquid-phase silylation process for Top Surface Imaging Lithography systems incorporating e-beam exposure has been experimentally investigated using FT-IR spectroscopy, UV spectroscopy, SIM spectrometry and SEM cross-sectionals. The impact of different silylating agents on Shipley SPR505A resist system is presented for both the UV exposed and e-beam crosslinked regions of the resist. Results show that an e-beam dose of 50μC/cm2 at 30keV is sufficient to crosslink the resist and prevent silylation. The silylation contrast using HMCTS was found to be the highest (11:1) in comparison with other two agents. It was found that the silicon incorporation in SPR505A resist follows Case II diffusion mechanisms
Keywords :
Fourier transform spectroscopy; electron beam lithography; infrared spectroscopy; photoresists; scanning electron microscopy; secondary ion mass spectroscopy; ultraviolet lithography; ultraviolet spectroscopy; 30 keV; Case II diffusion mechanisms; FT-IR spectroscopy; HMCTS; I-line resists; SEM cross-sectionals; SIM spectrometry; Shipley SPR505A resist system; UV exposed regions; UV spectroscopy; deep UV lithographic technologies; e-beam exposure; liquid-phase silylation; silylating agents; top surface imaging lithography processes; High-resolution imaging; Lithography; Optical imaging; Optical sensors; Optical surface waves; Resists; Silicon; Spectroscopy; Stimulated emission; Surface topography;
Conference_Titel :
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-7235-2
DOI :
10.1109/MIEL.2002.1003307
