DocumentCode :
161714
Title :
Low current cross-point memory using gadolinium-oxide switching material
Author :
Jana, D. ; Maikap, S. ; Chen, Y.Y. ; Yang, J.R.
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
fYear :
2014
fDate :
28-30 April 2014
Firstpage :
1
Lastpage :
2
Abstract :
Low current cross-point memory using gadolinium-oxide switching material in an IrOx/GdOx/W structure has been investigated for the first time. Memory device shows low current bipolar resistive switching phenomena and self-compliance phenomena as well, repeatable switching cycles, good uniformity, long program/erase endurance of >60k every cycles, and good data retention of >104 s at a low CC of 50 μA.
Keywords :
gadolinium compounds; iridium compounds; low-power electronics; random-access storage; tungsten; IrOx-GdOx-W; data retention; gadolinium-oxide switching material; low current bipolar resistive switching phenomena; low current cross-point memory; memory device; next generation nonvolatile memory devices; self-compliance phenomena; Films; Nanoscale devices; Nonvolatile memory; Optical switches; Resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on
Conference_Location :
Hsinchu
Type :
conf
DOI :
10.1109/VLSI-TSA.2014.6839686
Filename :
6839686
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=161714
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