• DocumentCode
    1617178
  • Title

    Extraction of the interfacial generation velocity in MOSFETs

  • Author

    Dugas, J. ; Jérisian, R. ; Oualid, J. ; Labrunye, D. ; Mirabel, J.M.

  • Author_Institution
    Lab. des Materiaux et Composants Semi-Cond., Domaine Univ. de Saint-Jerome, Marseille, France
  • fYear
    1990
  • Firstpage
    11
  • Lastpage
    15
  • Abstract
    A novel method based upon gate controlled diode static characteristics is proposed to determine the interfacial generation velocity So in MOSFETs. So is deduced from the measurement of the apparent generation velocity of two long transistors with different channel lengths. Results concerning natural or implanted transistors, with single or double diffused drains, are presented and discussed
  • Keywords
    carrier mobility; insulated gate field effect transistors; ion implantation; MOSFETs; apparent generation velocity; channel lengths; double diffused drains; gate controlled diode static characteristics; implanted transistors; interfacial generation velocity; long transistors; single diffused drains; Character generation; Current measurement; Diodes; Interface states; Leakage current; Length measurement; MOSFETs; Performance evaluation; Velocity control; Velocity measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 1991. ICMTS 1991. Proceedings of the 1991 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    0-87942-588-1
  • Type

    conf

  • DOI
    10.1109/ICMTS.1990.161705
  • Filename
    161705
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1617178