Title :
Cu/ULK integration using a post integration porogen removal approach
Author :
Fayolle, M. ; Jousseaume, V. ; Assous, M. ; Tabouret, E. ; Le Cornec, C. ; Haumesser, P.H. ; Leduc, P. ; Feldis, H. ; Louveau, O. ; Passemard, G. ; Fusalba, F.
Author_Institution :
CEA-LETI, Grenoble, France
Abstract :
This paper is focused on a new integration scheme to perform Cu/porous ULK interconnects. The dielectric (composite material made of porogen nano-particles dispersed in a MSQ matrix) is integrated in its non-porous state, preventing integration issues inherent in porous material. The porosity is only created after integration by a final thermal degradation of the porogen phase. Material, curing and processes compatibilities have been studied in order to perform single damascene interconnects. Electrical results prove the feasibility of this approach, showing that the porogen can be preserved during the integration and removed after the integration.
Keywords :
copper; curing; dielectric thin films; etching; integrated circuit interconnections; nanoparticles; polymers; Cu; MSQ matrix; ULK integration; composite material; dielectric material; nonporous state; porogen nanoparticles; porosity; porous ULK interconnects; porous material; post integration porogen removal approach; single damascene interconnects; thermal degradation; Composite materials; Curing; Delay; Dielectric constant; Dielectric materials; Etching; Inorganic materials; Nanoporous materials; Resists; Thermal degradation;
Conference_Titel :
Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International
Print_ISBN :
0-7803-8308-7
DOI :
10.1109/IITC.2004.1345748
