Title :
Study of redox reactions in resistive switching processes of AlOx/WOy based bilayer RRAM
Author :
Minghao Wu ; Huaqiang Wu ; Xinyi Li ; Ning Deng ; He Qian
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
Pulsed programming measurements were carried out to study the abrupt differences between the SET/RESET processes of the AlOx/WOy bilayer RRAM devices. Electrical measurement results showed that both SET and RESET switching are affected by the applied pulse amplitude. But the RESET operation has a strong relation with the pulse width. Calculation results indicate the RESET step needs more energy than the SET step. A combination of electrical field and joule heating is needed to complete the RESET step. A redox reaction model is proposed to explain the asymmetry characteristic of the SET/RESET operations.
Keywords :
aluminium compounds; oxidation; random-access storage; reduction (chemical); tungsten compounds; AlOx-WOy; Joule heating; applied pulse amplitude; asymmetry characteristic; bilayer RRAM devices; electrical field; electrical measurement; pulsed programming measurements; redox reaction model; resistive switching processes; set-reset processes; Current measurement; Electrical resistance measurement; Fabrication; Ions; Resistance; Switches; Voltage measurement; RRAM; Redox reaction; Switching mechanism;
Conference_Titel :
VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on
Conference_Location :
Hsinchu
DOI :
10.1109/VLSI-TSA.2014.6839690
