Title :
A novel dual-channel SOI LIGBT with improved reliability
Author :
Shifeng Zhang ; Yan Han ; Koubao Ding ; Bin Zhang ; Wei Zhang ; Huanting Wu
Author_Institution :
Inst. of Microelectron. & Photoelectron., Zhejiang Univ., Hangzhou, China
Abstract :
This paper introduces a novel dual-channel silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT). The reliability has been compared between conventional SOI LIGBT and dual-channel SOI LIGBT. Experiments show that the dual-channel SOI LIGBT leads to a significant improvement in the reliability. That is, the improved latch-up characteristic, and the improved hot-carrier-induced reliability. Moreover, the current carrying capability of dual-channel SOI LIGBT is better than conventional SOI LIGBT.
Keywords :
insulated gate bipolar transistors; semiconductor device reliability; silicon-on-insulator; dual channel SOI LIGBT; hot carrier induced reliability; latch-up characteristic; lateral insulated gate bipolar transistor; silicon-on-insulator; Degradation; Electric fields; Hot carriers; Integrated circuit reliability; Silicon-on-insulator; Thyristors; dual-channel SOI LIGBT; latch-up; reliability;
Conference_Titel :
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4673-5694-7
DOI :
10.1109/EDSSC.2012.6482761
