A novel Si-based X´tal oscillator device using 3D integration technologies

Author

Jian-Yu Shih ; Yen-Chi Chen ; Chih-Hung Chiu ; Chung-Lun Lo ; Kuan-Neng Chen

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2014

fDate

28-30 April 2014

Firstpage

1

Lastpage

2

Abstract

A novel Si-based X´tal oscillator device (1.2 mm × 1.0 mm) is demonstrated by using 3D integration technologies. It is distinct from conventional X´tal oscillator device with ceramics and metal lid. The novel Si-based X´tal oscillator device shows no leakage path, and passes the hermetic encapsulation test and reliability investigation. In addition, the novel device shows the excellent electrical characteristics and provides the possibility to replace the conventional fabrication approach for the next generation products.

Keywords

elemental semiconductors; integrated circuit reliability; oscillators; silicon; three-dimensional integrated circuits; 3D integration technology; Si; ceramics; electrical characteristics; fabrication approach; hermetic encapsulation test; metal lid; next generation products; reliability investigation; silicon-based X´tal oscillator device; Bonding; Oscillators; Reliability; Stress; Substrates; Three-dimensional displays; Through-silicon vias;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/VLSI-TSA.2014.6839693

Filename

6839693