A 128.24-to-137.00GHz injection-locked frequency divider in 65nm CMOS

Author

Lin, Bo-Yu ; Tsai, Kun-Hung ; Liu, Shen-Iuan

Author_Institution

Nat. Taiwan Univ., Taipei

fYear

2009

Firstpage

282

Abstract

Owing to the nanoscale CMOS technology, mm-wave circuits have been recently attracting a lot of attention for communication, sensing and imaging systems. Several mm-wave components with operation frequencies around or more than 100 GHz have been reported. The frequency divider is one of the key building blocks in wireless transceivers. Several W-Band (75 to 110 GHz) and D-Band (90 to 140 GHz) ILFDs and static dividers have been presented. In this work, a 128.24 to 137.00 GHz CMOS ILFD with split- injection and split-cross-coupled pair is presented for D-Band applications.

Keywords

CMOS integrated circuits; frequency dividers; injection locked oscillators; millimetre wave circuits; nanoelectronics; transceivers; D-Band ILFD; W-Band ILFD; frequency 128.24 GHz to 137 GHz; frequency 75 GHz to 110 GHz; frequency 90 GHz to 140 GHz; injection-locked frequency divider; mm-wave circuit; nanoscale CMOS technology; size 65 nm; split- injection coupled pair; split-cross-coupled pair; static divider; wireless transceiver; CMOS technology; Circuits; Frequency conversion; Frequency measurement; Noise measurement; Power generation; Q factor; Semiconductor device measurement; Signal generators; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference - Digest of Technical Papers, 2009. ISSCC 2009. IEEE International

Conference_Location

San Francisco, CA

Print_ISBN

978-1-4244-3458-9

Type

conf

DOI

10.1109/ISSCC.2009.4977418

Filename

4977418