Influence of rapid thermal annealing modes on the parameters of Ni/21R-SiC contacts

Author

Litvinov, V.L. ; Demakov, K.D. ; Agueev, O.A. ; Svetlichnyi, A.M. ; Konakova, R.V. ; Lytvyn, P.M. ; Milenin, V.V.

Author_Institution

Inst. of Inf. Technol., RSC Kurchatov Inst., Moscow, Russia

Volume

2

fYear

2002

fDate

6/24/1905 12:00:00 AM

Firstpage

551

Lastpage

554

Abstract

Studied the effect of rapid thermal annealing (RTA) on the parameters of diode structures with Ni-n-SiC-21R(0001) and Ni-n-SiC-21R(0001¯) Schottky barriers. Ohmic contacts to these structures were formed by nickel resistive sputtering onto the substrate (heated up to 300°C) followed with fusion at T = 450°C for 10 min. It was shown that one can, in principle, obtain Ni-n-SiC diode structures (formed at Si- and C-faces of SiC-21R polytype) that are heat-tolerant up to 450°C

Keywords

Schottky diodes; nickel; ohmic contacts; rapid thermal annealing; silicon compounds; sputter deposition; wide band gap semiconductors; 10 min; 300 degC; 450 degC; Ni-SiC; Ni-n-SiC; Schottky barriers; diode structures; heat-tolerant structures; ohmic contacts; rapid thermal annealing modes; resistive sputtering; Conductivity; Metallization; Nickel; Ohmic contacts; Rapid thermal annealing; Schottky barriers; Schottky diodes; Silicon carbide; Sputtering; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2002. MIEL 2002. 23rd International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-7235-2

Type

conf

DOI

10.1109/MIEL.2002.1003318

Filename

1003318