Foundry technology for RF and high performance analog applications

Author

Hurwitz, P. ; Chaudhry, S. ; Preisler, E. ; Kanawati, Rushed ; Racanelli, M.

Author_Institution

TowerJazz, Newport Beach, CA, USA

fYear

2014

fDate

28-30 April 2014

Firstpage

1

Lastpage

4

Abstract

The requirements for silicon foundry technology serving the RF / mixed signal and high performance analog (HPA) market are very different from those intended for mostly digital designs. RF / HPA applications require a rich set of features in a modular platform with accurate RF models for first-pass design success in demanding applications that stress speed, voltage and noise requirements. In this paper we present examples of such technologies focusing on two areas of particular recent interest: silicon technology for the front-end module of wireless handsets and high-speed SiGe BiCMOS technology serving high-speed networks and mmWave wireless applications.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; analogue circuits; foundries; integrated circuit design; millimetre wave integrated circuits; semiconductor materials; silicon; HPA; RF models; RF-mixed signal applications; SiGe; digital designs; first-pass design; front-end module; high performance analog applications; high-speed BiCMOS technology; high-speed networks; millimetre wave wireless applications; silicon foundry technology; wireless handsets; BiCMOS integrated circuits; Foundries; Optical switches; Performance evaluation; Radio frequency; Silicon germanium; Substrates; RF switch; SOI; SiGe; front end modules; millimeter wave; power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/VLSI-TSA.2014.6839697

Filename

6839697