DocumentCode :
161737
Title :
Foundry technology for RF and high performance analog applications
Author :
Hurwitz, P. ; Chaudhry, S. ; Preisler, E. ; Kanawati, Rushed ; Racanelli, M.
Author_Institution :
TowerJazz, Newport Beach, CA, USA
fYear :
2014
fDate :
28-30 April 2014
Firstpage :
1
Lastpage :
4
Abstract :
The requirements for silicon foundry technology serving the RF / mixed signal and high performance analog (HPA) market are very different from those intended for mostly digital designs. RF / HPA applications require a rich set of features in a modular platform with accurate RF models for first-pass design success in demanding applications that stress speed, voltage and noise requirements. In this paper we present examples of such technologies focusing on two areas of particular recent interest: silicon technology for the front-end module of wireless handsets and high-speed SiGe BiCMOS technology serving high-speed networks and mmWave wireless applications.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; analogue circuits; foundries; integrated circuit design; millimetre wave integrated circuits; semiconductor materials; silicon; HPA; RF models; RF-mixed signal applications; SiGe; digital designs; first-pass design; front-end module; high performance analog applications; high-speed BiCMOS technology; high-speed networks; millimetre wave wireless applications; silicon foundry technology; wireless handsets; BiCMOS integrated circuits; Foundries; Optical switches; Performance evaluation; Radio frequency; Silicon germanium; Substrates; RF switch; SOI; SiGe; front end modules; millimeter wave; power amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on
Conference_Location :
Hsinchu
Type :
conf
DOI :
10.1109/VLSI-TSA.2014.6839697
Filename :
6839697
Link To Document :
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