Title :
Distribution of slip dislocations in thermally deformed silicon wafers
Author :
Aghabekyan, A.V. ; Ayvazyan, G.E. ; Vardanyan, A.H.
Author_Institution :
Div. of Mater. & Semicond. Devices, Transistor Co., Yerevan, Armenia
fDate :
6/24/1905 12:00:00 AM
Abstract :
Spatial distribution of slip dislocations in saddle-shaped Czochralski silicon wafers was characterized using an X-ray topography and optical microscope. It is shown that slip dislocations are preferentially generated and randomly distributed on the concave region versus the convex region of the wafers. Asymmetrical distribution of dislocations increases with increase in treatment temperature. The obtained results are explained by the combined action of internal compressive stresses, generated because of lattice mismatch between SiO x precipitates and Si matrix, and additional thermal bending stresses on the concave region of the thermally deformed wafers
Keywords :
X-ray topography; bending; dislocation density; dislocation etching; elemental semiconductors; internal stresses; optical microscopy; silicon; slip; thermal stresses; Si; X-ray topography; asymmetrical distribution; concave region; convex region; cup-shaped deformation; etch pits; internal compressive stresses; lattice mismatch; optical microscopy; plastic deformation; precipitates; randomly distributed; resolved shear stress component; saddle-shaped Czochralski wafers; slip dislocations; spatial distribution; temperature dependence; thermal bending stresses; thermal warping; thermally deformed silicon wafers; thermally deformed wafers; Compressive stress; Etching; Furnaces; Optical microscopy; Reactive power; Silicon; Surfaces; Temperature; Testing; Thermal stresses;
Conference_Titel :
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-7235-2
DOI :
10.1109/MIEL.2002.1003319
