Analytical modelling of current in higher width graphene nanoribbon field effect transistor

Author

Muntasir, T. ; Gupta, Syamantak Datta ; Islam, Md Shariful

Author_Institution

Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh

fYear

2012

Firstpage

1

Lastpage

4

Abstract

An analytical model for drain-source current of higher width graphene-nanoribbon field-effect-transistor (GNR-FET) with back and top gates is developed. This analytical model is based on the two-dimensional Poisson´s equation in the weak nonlocality approximation. Analytical formula for drain-source current is derived in terms of device parameters and applied voltages. Dependence of current on applied voltages is investigated. It is shown that drain-source current is controlled by applied voltages hence has applications in digital and analog circuits.

Keywords

Poisson equation; field effect transistors; graphene; nanoribbons; GNR-FET; Poisson equation; analytical modelling; drain-source current; higher width graphene nanoribbon field effect transistor; Analytical models; Distribution functions; Electric potential; Equations; Graphene; Logic gates; Photonic band gap; GNR-FET; analytical model; current voltage characteristics; higher width graphene nanoribbon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on

Conference_Location

Bangkok

Print_ISBN

978-1-4673-5694-7

Type

conf

DOI

10.1109/EDSSC.2012.6482772

Filename

6482772