A matrix-computation based methodology for extracting the S-parameters of interconnects in advanced packaging technologies

A reliable method is proposed to extract the S-parameters of the vertical interconnects which normally could not be obtained directly with measurement. This kind of vertical interconnect includes bumpers and through-silicon-vias (TSVs) popularly used in advanced packaging. The proposed method, composed of designing structures and processing matrix, exhibits its validity over a wide range of frequency. The bump appearing in flip-chip assembly is utilized as an example of which the S-parameters are extracted. The equations and the measurement procedure making up the method are reported in detail.