Title :
1.2-V folded down-conversion wideband mixer in 65-nm CMOS
Author :
Muhammad, Naveed ; Zhi Gong Wang ; Bao Kuan ; Zhiqun Li
Author_Institution :
Inst. of RF- & OE-ICs, Southeast Univ., Nanjing, China
Abstract :
This paper presents the design of a low-voltage folded down-conversion mixer for direct conversion receiver. The RF-transconductance stage of the mixer is based on an AC-coupled stacked NMOS-PMOS current reuse topology. The mixer has a peak conversion gain (CG) of 8 dB with a 3-dB bandwidth from 10.25 GHz to approximately 17.8 GHz (IF ranges from DC to 6.5 GHz). The LO center frequency for the mixer is fixed at 12 GHz and RF input band with respect to center frequency is from 10.25 GHz to 13.75 GHz. It displays an OIP3 of 9.76 dBm. The minimum SSB-NF is 8.2 dB with a flicker noise corner frequency of 250 kHz. It has an IIP2 in excess of 50 dBm. The mixer draws a current of 12 mA from a 1.2-V supply.
Keywords :
MOS integrated circuits; low-power electronics; mixers (circuits); network topology; AC-coupled stacked NMOS-PMOS current reuse topology; CMOS; RF transconductance; bandwidth 10.25 GHz to 17.8 GHz; current 12 mA; direct conversion receiver; frequency 10.25 GHz to 13.75 GHz; gain 8 dB; low-voltage folded down-conversion wideband mixer; size 65 nm; voltage 1.2 V; Mixers; Noise; Radio frequency; Switches; Switching circuits; Transconductance; Transistors; Conversion Gain; Direct-conversion Mixer; IIP2; OIP3; SSB-NF;
Conference_Titel :
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4673-5694-7
DOI :
10.1109/EDSSC.2012.6482774