Title :
A fully integrated 24GHz UWB radar sensor for automotive applications
Author :
Ragonese, Egidio ; Scuderi, Angelo ; Giammello, Vittorio ; Messina, Ettore ; Palmisano, Giuseppe
Author_Institution :
Univ. di Catania, Catania
Abstract :
Radar-based advanced safety systems are crucial to reduce road accidents caused by driver inattention. An actual and pervasive adoption of radar technology requires the development of low-cost Silicon-integrated sensors, including microwave, analog, and digital blocks on a single chip, able to replace existing discrete electronics based on compound semiconductors. Indeed, the considerable advantage of silicon lies in its natural capability for integration that will enable a higher level of complexity in such sensors. This paper presents a fully integrated 24GHz UWD radar sensor implemented in a 0.13mum SiGe BiCMOS process. The UWB signal generation takes advantage of a PLL. The produced 24.125GHz carrier is properly BPSK modulated to increase sensor robustness within the entire SRR sensor network.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; automotive electronics; phase shift keying; ultra wideband radar; BPSK modulation; PLL; SRR sensor network; SiGe BiCMOS process; UWB radar sensor; UWB signal generation; automotive applications; frequency 24.125 GHz; phase locked loop; Automotive applications; BiCMOS integrated circuits; Driver circuits; Germanium silicon alloys; Microwave sensors; Microwave technology; Road accidents; Road safety; Silicon germanium; Ultra wideband radar;
Conference_Titel :
Solid-State Circuits Conference - Digest of Technical Papers, 2009. ISSCC 2009. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-3458-9
DOI :
10.1109/ISSCC.2009.4977430
