Ultra-thin silicon strip detectors for hadrontherapy beam monitoring

Author

Bouterfa, M. ; Flandre, Denis

Author_Institution

Inf. & Commun. Technol., Electron. & Appl. Math. (ICTEAM), Univ. cCatholique de Louvain, Louvain-la-Neuve, Belgium

fYear

2012

Firstpage

1

Lastpage

2

Abstract

We present a new generation of ultra-thin detectors for hadrontherapy beam monitoring. Ultra-low thicknesses reachable thanks to thick-SOI wafers enable a very low beam scattering degradation and provide very good electrical characteristics for both 20 and 10μm thicknesses: very high signal-to-dark current ratio, weak bulk-to-strip and dark current variability, very high interstrip resistance and a considerable charge collection efficiency at null bias.

Keywords

biomedical measurement; elemental semiconductors; patient monitoring; semiconductor counters; silicon; silicon-on-insulator; Si; charge collection efficiency; dark current variability; electrical characteristics; hadrontherapy beam monitoring; null bias; signal-to-dark current ratio; size 10 mum; size 20 mum; thick-SOI wafers; ultralow thicknesses; ultrathin silicon strip detectors; very high interstrip resistance; very low beam scattering degradation; weak bulk-to-strip current variability; Dark current; Detectors; Fabrication; Monitoring; Silicon; Strips; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on

Conference_Location

Bangkok

Print_ISBN

978-1-4673-5694-7

Type

conf

DOI

10.1109/EDSSC.2012.6482776

Filename

6482776