Title :
DC/RF characterization and modeling of illuminated microwave GaAs MESFETs
Author_Institution :
Dept. of Electr. Eng., Palermo Univ.
Abstract :
A systematic approach to the characterization and modeling of DC and RF behavior of microwave GaAs MESFETs under quasi-static optical illumination is presented. A set of measurements aiming at separating direct and indirect effects is discussed, and a general, nonlinear, light-intensity-dependent circuit model capable of accounting for both of them is proposed. The experimental results pertaining to the characterization of a commercial device are then presented. On this basis, the general model is particularized into a simplified first-approximation model, whose accuracy is checked by comparing a set of additional measurements with the relevant computer-simulated results
Keywords :
III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; semiconductor device models; solid-state microwave devices; DC characterisation; GaAs; MESFETs; RF characterization; light-intensity-dependent circuit model; modeling; nonlinear model; quasi-static optical illumination; Circuits; Gallium arsenide; Lighting; MESFETs; Microwave devices; Microwave transistors; Nonlinear optical devices; Nonlinear optics; Optical devices; Radio frequency;
Conference_Titel :
Circuits and Systems, 1992., Proceedings of the 35th Midwest Symposium on
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-0510-8
DOI :
10.1109/MWSCAS.1992.271161
