DocumentCode :
1617691
Title :
Carbon nanotube vias for future LSI interconnects
Author :
Nihei, Mizuhisa ; Horibe, Masahiro ; Kawabata, Akio ; Awano, Yuji
Author_Institution :
Fujitsu Ltd., Atsugi, Japan
fYear :
2004
Firstpage :
251
Lastpage :
253
Abstract :
We have developed carbon nanotube (CNT) vias consisting of about 1000 tubes. The total resistance of the CNT via was measured as three orders of magnitude lower than the current flows in parallel through about 1000 tubes. There is no degradation observed for 100 hours at the via current density of 2×106 A/cm2, which is favourably with Cu vias. This is the first trial demonstration of CNT vias for future LSI interconnects.
Keywords :
carbon nanotubes; integrated circuit interconnections; large scale integration; LSI interconnects; carbon nanotubes vias; current density; current flows; Carbon nanotubes; Contact resistance; Current density; Dielectric substrates; Electrical resistance measurement; Electrodes; Integrated circuit interconnections; Large scale integration; Ohmic contacts; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International
Print_ISBN :
0-7803-8308-7
Type :
conf
DOI :
10.1109/IITC.2004.1345767
Filename :
1345767
Link To Document :
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