Title :
Design of wideband CMOS LNA with active inductor and using noise-canceling technique
Author :
Gao, Mingkun ; Wang, Yi ; Wang, Yunfeng ; Guo, Donghui
Author_Institution :
Dept. of Phys., Xiamen Univ., Xiamen, China
Abstract :
A wideband CMOS low-noise amplifier (LNA) is presented in this paper. The LNA exploits a combination of a common-gate stage and a common-source stage to cancel the noise from the input matching device. An active inductor is used to extend the bandwidth and minimize the chip area. It is designed with 0.18 mum CMOS process in an active area of 0.04 mm2. Post simulation shows that the LNA has a maximum power gain of 14 dB and noise-figure less than 4 dB from 375 MHz to 2.18 GHz while drawing 8.1 mA from 1.8 V supply voltage including output buffer.
Keywords :
CMOS integrated circuits; inductors; low noise amplifiers; active inductor; common-gate stage; common-source stage; current 8.1 mA; frequency 375 MHz to 2.18 GHz; input matching device; low-noise amplifier; noise-canceling technique; size 0.18 mum; voltage 1.8 V; wideband CMOS LNA design; Active inductors; Active noise reduction; Bandwidth; CMOS process; CMOS technology; Gain; Impedance matching; Low-noise amplifiers; Noise cancellation; Wideband; Active Inductor; Noise-Canceling; Wideband LNA;
Conference_Titel :
Anti-counterfeiting, Security, and Identification in Communication, 2009. ASID 2009. 3rd International Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3883-9
Electronic_ISBN :
978-1-4244-3884-6
DOI :
10.1109/ICASID.2009.5276909
