Title :
The vertical test structure for measuring contact resistance between two kinds of metal
Author :
Ido, Sachio ; Imai, Masahiko ; Kumise, Takaaki ; Satoh, Masami ; Horir, H. ; Ando, Satoshi
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
A vertical test structure was developed for measuring the contact resistance between two kinds of metal. The contact resistance between Al/TiN/AlSi and heavily As+-doped n+-poly Si was measured using this structure. The test structure was found to suppress nonuniform current density in the contact hole and to provide more accurate contact resistances. In addition, the Rc of a small contact window could be obtained from the extrapolation of the measurement data found for large contact windows
Keywords :
aluminium; aluminium alloys; arsenic; carrier density; contact resistance; electric resistance measurement; elemental semiconductors; semiconductor-metal boundaries; silicon alloys; titanium compounds; Al-TiN-AlSi-Si:As+; contact hole; contact resistance; nonuniform current density; small contact window; vertical test structure; Conductivity; Contact resistance; Current density; Current measurement; Density measurement; Electrical resistance measurement; Electrodes; Impurities; Testing; Time measurement;
Conference_Titel :
Microelectronic Test Structures, 1991. ICMTS 1991. Proceedings of the 1991 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-87942-588-1
DOI :
10.1109/ICMTS.1990.161708
