Title :
A high-speed local feedback unity-gain amplifier
Author_Institution :
Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
A VLSI high-speed local feedback unity gain amplifier is discussed. The voltage gain depends on device matching only and is independent of temperature and of power supply variations. The DC-voltage gain is 1.04 or+0.45 dB. The input impedance at low frequencies is more than 10 MΩ and the output impedance is about 250 Ω. The -3 dB bandwidth is about 400 MHz at a total load of 3.7 pF, and can be increased to beyond 1 GHz at a 0.5 pF load. Rise and fall times are less than 4 ns at 3 V amplitude. The power dissipation is about 30 mW. The VLSI circuit was fabricated in 1.25 μm CMOS technology. The chip size is 60 μm×60μm
Keywords :
CMOS integrated circuits; VLSI; feedback; operational amplifiers; 0.45 dB; 0.5 pF; 1.04 dB; 1.25 micron; 3 V; 3.7 pF; 30 mW; 4 ns; 400 MHz; CMOS technology; DC-voltage gain; VLSI; chip size; device matching; fall times; input impedance; local feedback unity-gain amplifier; output impedance; power dissipation; power supply variations; rise times; Bandwidth; CMOS technology; Feedback; Frequency; Impedance; Power dissipation; Power supplies; Temperature dependence; Very large scale integration; Voltage;
Conference_Titel :
Circuits and Systems, 1992., Proceedings of the 35th Midwest Symposium on
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-0510-8
DOI :
10.1109/MWSCAS.1992.271178
