A comparative study on analog/RF performance of Pt-germanide and Pt-silicide Schottky barrier pMOSFETs

In this paper for the first time a comparative study on analog/RF performance of Pt-germanide (PtGe) and Pt-silicide (PtSi) dopant-segregated Schottky barrier (DSSB) germaniumon-insulator (GOI) and DSSB silicon-on-insulator (SOI) p-channel MOSFETs has been carried out by using the two dimensional MEDICI simulator. It has been found that, the hole barrier lowering and thinning induced by dopant-segregation at PtGe-Ge interface reduces the source/drain-to-channel contact resistance due to which the analog/RF figures of merit such as transconductance, unity-gain frequency, maximum power gain frequency, short-circuit current gain and the unilateral power gain of PtGe-GOI DSSB pMOSFET are improved by ~42%, ~28%, ~34%, ~30% and ~71% respectively over the PtSi-SOI DSSB pMOSFET. Thus, PtGe-GOI DSSB pMOSFET is a suitable candidate for future analog/RF circuits.