Title :
Simulation study on FinFET with tri-material gate
Author :
Cong Li ; Yiqi Zhuang ; Li Zhang
Author_Institution :
Sch. of Microelectron., Xidian Univ., Xi´an, China
Abstract :
In this paper, a novel tri-material gate (TMG) FinFET device is proposed. Using three-dimensional (3-D) device simulator, hot-carrier effects and short-channel effects of TMG FinFET are investigated and compared with that of dual-material gate FinFET and conventional FinFET. Numerical simulation results shows that TMG FinFET exhibits significantly improved performance in terms of surface potential, electric field and carrier velocity distribution.
Keywords :
MOSFET; hot carriers; numerical analysis; surface potential; 3D device simulator; TMG FinFET device; carrier velocity distribution; dual-material gate FinFET; electric field; hot-carrier effect; numerical simulation; short-channel effect; surface potential; three-dimensional device simulator; trimaterial gate FinFET device; Electric potential; FinFETs; Logic gates; Nanoscale devices; Performance evaluation; Subthreshold current; FinFET; hot-carrier effects; numerical simulation; short-channel effects; tri-material gate;
Conference_Titel :
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4673-5694-7
DOI :
10.1109/EDSSC.2012.6482802
