DocumentCode
1618265
Title
Effects of positive gate bias stress on radiation response in power VDMOSFETs
Author
Stojadinovic, N. ; Djoric-Veljkovic, S. ; Manic, I. ; Davidovic, V. ; Golubovic, S.
Author_Institution
Fac. of Electron. Eng., Nis Univ., Serbia
Volume
2
fYear
2002
fDate
6/24/1905 12:00:00 AM
Firstpage
723
Lastpage
726
Abstract
The effects of pre-irradiation positive gate bias stress on radiation response of power VDMOSFETs have been investigated. Larger irradiation induced threshold voltage shift and mobility reduction in stressed devices have been observed, clearly demonstrating inapplicability of gate bias stressing for radiation hardening of power VDMOSFETs
Keywords
carrier mobility; power MOSFET; radiation effects; semiconductor device reliability; mobility reduction; positive gate bias stress; power VDMOSFETs; radiation hardening; radiation response; threshold voltage shift; Annealing; Ionizing radiation; Leakage current; MOSFETs; Power system reliability; Radiation hardening; Space technology; Stress; Temperature; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-7235-2
Type
conf
DOI
10.1109/MIEL.2002.1003359
Filename
1003359
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