Title :
Effects of positive gate bias stress on radiation response in power VDMOSFETs
Author :
Stojadinovic, N. ; Djoric-Veljkovic, S. ; Manic, I. ; Davidovic, V. ; Golubovic, S.
Author_Institution :
Fac. of Electron. Eng., Nis Univ., Serbia
fDate :
6/24/1905 12:00:00 AM
Abstract :
The effects of pre-irradiation positive gate bias stress on radiation response of power VDMOSFETs have been investigated. Larger irradiation induced threshold voltage shift and mobility reduction in stressed devices have been observed, clearly demonstrating inapplicability of gate bias stressing for radiation hardening of power VDMOSFETs
Keywords :
carrier mobility; power MOSFET; radiation effects; semiconductor device reliability; mobility reduction; positive gate bias stress; power VDMOSFETs; radiation hardening; radiation response; threshold voltage shift; Annealing; Ionizing radiation; Leakage current; MOSFETs; Power system reliability; Radiation hardening; Space technology; Stress; Temperature; Threshold voltage;
Conference_Titel :
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-7235-2
DOI :
10.1109/MIEL.2002.1003359
