Title :
Circuit model for SelBox MOSFET
Author :
Narayanan, Michael R. ; Al-Nashash, Hasan ; Pal, Debdas ; Chandra, Mahesh
Author_Institution :
American Univ. of Sharjah, Sharjah, United Arab Emirates
Abstract :
This paper presents an analysis of reduction of the kink effect observed in the current-voltage output characteristics of a partially depleted SOI MOSFET device. The back oxide for the device is introduced at selected regions below the source and drain and not continuously as in an SOI devices giving rise to what is termed Selective Back Oxide structure or “SELBOX” structure. Simulation results indicate that the proposed structure can significantly reduce the kink while still preserving major advantages offered by conventional SOI structure. In addition A device model that explains the kink behaviour of the structure is also developed.
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; SelBox MOSFET; circuit model; current-voltage output characteristics; kink behaviour; kink effect reduction analysis; partially depleted SOI MOSFET device; selective back oxide structure; semiconductor device model; Immune system; Impact ionization; Integrated circuit modeling; MOSFET; Semiconductor process modeling; Silicon-on-insulator; Substrates; Kink effect; SELBOX structure; SOI MOSFET; body voltage; substrate current;
Conference_Titel :
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4673-5694-7
DOI :
10.1109/EDSSC.2012.6482805
