Title :
Characterisation of radiation response of 400 nm implanted gate oxide RADFETs
Author :
Jaksic, A. ; Ristic, G. ; Pejovic, M. ; Mohammadzadeh, A. ; Lane, W.
Author_Institution :
Nat. Microelectron. Res. Centre, Cork, Ireland
fDate :
6/24/1905 12:00:00 AM
Abstract :
In order to achieve lower initial threshold voltage, a boron implantation has been done through thermally grown 400 nm gate oxide of the radiation sensitive p-channel MOSFET (RADFET). The paper presents and discusses the results of a recent study aimed to provide detailed characterisation of radiation response of this type of RADFET. Implications of the implantation for practical RADFET applications and basic mechanisms underlying device radiation behaviour are analysed
Keywords :
MOSFET; hole traps; interface states; ion implantation; silicon radiation detectors; 400 nm; Si-SiO2; device radiation behaviour; implantation; implanted gate oxide RADFETs; initial threshold voltage; radiation response; radiation sensitive p-channel MOSFET; Boron; Costs; Energy consumption; MOSFET circuits; Medical treatment; Microprocessors; Research and development; Space charge; Threshold voltage; Voltage measurement;
Conference_Titel :
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-7235-2
DOI :
10.1109/MIEL.2002.1003360
