• DocumentCode
    1618308
  • Title

    Characterisation of radiation response of 400 nm implanted gate oxide RADFETs

  • Author

    Jaksic, A. ; Ristic, G. ; Pejovic, M. ; Mohammadzadeh, A. ; Lane, W.

  • Author_Institution
    Nat. Microelectron. Res. Centre, Cork, Ireland
  • Volume
    2
  • fYear
    2002
  • fDate
    6/24/1905 12:00:00 AM
  • Firstpage
    727
  • Lastpage
    730
  • Abstract
    In order to achieve lower initial threshold voltage, a boron implantation has been done through thermally grown 400 nm gate oxide of the radiation sensitive p-channel MOSFET (RADFET). The paper presents and discusses the results of a recent study aimed to provide detailed characterisation of radiation response of this type of RADFET. Implications of the implantation for practical RADFET applications and basic mechanisms underlying device radiation behaviour are analysed
  • Keywords
    MOSFET; hole traps; interface states; ion implantation; silicon radiation detectors; 400 nm; Si-SiO2; device radiation behaviour; implantation; implanted gate oxide RADFETs; initial threshold voltage; radiation response; radiation sensitive p-channel MOSFET; Boron; Costs; Energy consumption; MOSFET circuits; Medical treatment; Microprocessors; Research and development; Space charge; Threshold voltage; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2002. MIEL 2002. 23rd International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    0-7803-7235-2
  • Type

    conf

  • DOI
    10.1109/MIEL.2002.1003360
  • Filename
    1003360
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1618308