Title :
A new structure for measuring the thermal conductivity of integrated circuit dielectrics
Author :
Orchard-Webb, J.H.
Author_Institution :
Mitel Semicond., Kanata, Ont., Canada
Abstract :
A novel device is described for measuring thermal conductivities of microelectronic dielectrics. This temperature is measured immediately above and below the dielectric slab, avoiding the need for difficult corrections to the measured temperature. Results are insensitive to photoengraving spreads and to overlying dielectrics. The structure can be used to measure sheet resistances and derive the thermal conductivity or dielectric thickness at the parametric measurement stage of integrated circuit production. The abilities of the structure are illustrated for two of the most difficult to measure dielectrics: the intermetal dielectric and the interpoly dielectric
Keywords :
dielectric thin films; integrated circuit testing; production testing; thermal conductivity measurement; thermal resistance measurement; dielectric slab; dielectric thickness; integrated circuit dielectrics; integrated circuit production; intermetal dielectric; interpoly dielectric; parametric measurement stage; photoengraving spreads; sheet resistances; thermal conductivity; Conductivity measurement; Dielectric devices; Dielectric measurements; Electrical resistance measurement; Integrated circuit measurements; Microelectronics; Slabs; Temperature measurement; Thermal conductivity; Thickness measurement;
Conference_Titel :
Microelectronic Test Structures, 1991. ICMTS 1991. Proceedings of the 1991 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-87942-588-1
DOI :
10.1109/ICMTS.1990.161710
